Solid-state Electronics

雜志介紹

Solid-state Electronics雜志介紹

《Solid-state Electronics》是一本以English為主的未開(kāi)放獲取國(guó)際優(yōu)秀期刊，中文名稱(chēng)固態(tài)電子，本刊主要出版、報(bào)道物理與天體物理-ENGINEERING, ELECTRICAL & ELECTRONIC領(lǐng)域的研究動(dòng)態(tài)以及在該領(lǐng)域取得的各方面的經(jīng)驗(yàn)和科研成果，介紹該領(lǐng)域有關(guān)本專(zhuān)業(yè)的最新進(jìn)展，探討行業(yè)發(fā)展的思路和方法，以促進(jìn)學(xué)術(shù)信息交流，提高行業(yè)發(fā)展。該刊已被國(guó)際權(quán)威數(shù)據(jù)庫(kù)SCIE收錄，為該領(lǐng)域相關(guān)學(xué)科的發(fā)展起到了良好的推動(dòng)作用，也得到了本專(zhuān)業(yè)人員的廣泛認(rèn)可。該刊最新影響因子為1.4，最新CiteScore 指數(shù)為3。

本刊近期中國(guó)學(xué)者發(fā)表的論文主要有：

• Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device

  Author: Thesberg, M.; Stanojevic, Z.; Baumgartner, O.; Kernstock, C.; Leonelli, D.; Barci, M.; Wang, X.; Zhou, X.; Jiao, H.; Donadio, G. L.; Garbin, D.; Witters, T.; Kundu, S.; Hody, H.; Delhougne, R.; Kar, G.; Karner, M.

• New insights into the effect of spatially distributed polarization in ferroelectric FET on content addressable memory operation for machine learning applications

  Author: Su, Chang; Xu, Weikai; Zhang, Lining; Huang, Ru; Huang, Qianqian

• Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation

  Author: Nishimura, T.; Eikyu, K.; Sonoda, K.; Ogata, T.

• Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18?m CMOS process

  Author: Guan, Wenjie; Wang, Yang; Deng, Zhiqin; Yu, Bo; Chen, Xijun; Jin, Xiangliang; Yang, Hongjiao

英文介紹

Solid-state Electronics雜志英文介紹

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.